AOWF11S65
Alpha and Omega Semiconductor, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 11A TO262F
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet AOWF11S65 Datasheet
-
ECAD Model
- Share
In Stock: 144
Can ship immediately
Pricing:
- 1$1.36213
- 1,000$1.36213
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Technical Details
- Series:aMOS™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:399mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13.2 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):28W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:-
- Package / Case:TO-262-3 Full Pack, I²Pak
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