NP100P04PDG-E1-AY

Renesas Electronics America
In Stock: 141

Can ship immediately

Pricing:
  • 1$2.9521
  • 800$2.9521

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:15100 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta), 200W (Tc)
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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