HTNFET-D
Honeywell Aerospace
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 8CDIP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet HTNFET-D Datasheet
-
ECAD Model
- Share
In Stock: 104
Can ship immediately
Pricing:
- 1$435
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Technical Details
- Series:HTMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:-
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:400mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id:2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 5 V
- Vgs (Max):10V
- Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 28 V
- FET Feature:-
- Power Dissipation (Max):50W (Tj)
- Operating Temperature:-55°C ~ 225°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:8-CDIP-EP
- Package / Case:8-CDIP Exposed Pad
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