EPC2010

EPC
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Technical Details

  • Series:eGaN®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Discontinued at Digi-Key
  • FET Type:N-Channel
  • Technology:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:25mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 3mA

 

  • Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 5 V
  • Vgs (Max):+6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

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