PMFPB6532UP,115

NXP Semiconductors
In Stock: 138

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 10 V
  • FET Feature:Schottky Diode (Isolated)
  • Power Dissipation (Max):520mW (Ta), 8.3W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN2020-6
  • Package / Case:6-UDFN Exposed Pad

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