PH5525L,115

NXP Semiconductors
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Technical Details

  • Series:TrenchMOS™
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:81.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.15V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2150 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

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