APT10M11B2VFRG

Microsemi
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Technical Details

  • Series:POWER MOS V®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 2.5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:450 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:10300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):520W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™
  • Package / Case:TO-247-3 Variant

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