PMN22XN,115

NXP Semiconductors
In Stock: 145

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:27mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:585 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):545mW (Ta), 6.25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-TSOP
  • Package / Case:SC-74, SOT-457

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