APT50MC120JCU2

Microchip Technology
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id:2.3V @ 1mA (Typ)

 

  • Gate Charge (Qg) (Max) @ Vgs:179 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 1000 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SOT-227
  • Package / Case:SOT-227-4, miniBLOC

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