APT1001R1BN

Technical Details

• Series:POWER MOS IV®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.1Ohm @ 5.25A, 10V
• Vgs(th) (Max) @ Id:4V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):310W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247AD
• Package / Case:TO-247-3