TPH3208LSG
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 20A 3PQFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPH3208LSG Datasheet
-
ECAD Model
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In Stock: 112
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:130mOhm @ 14A, 8V
- Vgs(th) (Max) @ Id:2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 8 V
- Vgs (Max):±18V
- Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):96W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:3-PQFN (8x8)
- Package / Case:3-PowerDFN
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