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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):5.5 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):3.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:2.4mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id:800mV @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:6 nC @ 3.5 V
  • Vgs (Max):±5.5V
  • Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 5.5 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-WLCSP (1.47x1.47)
  • Package / Case:6-SMD, No Lead

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