2N7000-AP

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:3V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):625mW (Ta)
• Operating Temperature:-55°C ~ 150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-92
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)