CP798X-CPDM302PH-CT

Central Semiconductor
In Stock: 172

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Technical Details

  • Series:-
  • Package:Tray
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:91mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 5 V
  • Vgs (Max):12V
  • Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

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