CP775-CWDM3011P-WN

Central Semiconductor
In Stock: 131

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Last Time Buy
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 8 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

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