BS108/01,126

NXP Semiconductors
In Stock: 142

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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.8V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 2.8V
  • Vgs(th) (Max) @ Id:1.8V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92-3
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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