PHK4NQ10T,518

NXP Semiconductors
In Stock: 145

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Technical Details

  • Series:TrenchMOS™
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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