PBRN113ZS,126

NXP Semiconductors
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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:700 mW
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92-3

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