IPG20N10S4L35ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 8TDSON
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet IPG20N10S4L35ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 14,563
Can ship immediately
Pricing:
- 1$1.43
- 5,000$0.49294
- 10,000$0.47441
Quote It
Technical Details
- Series:Automotive, AEC-Q101, OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):100V
- Current - Continuous Drain (Id) @ 25°C:20A
- Rds On (Max) @ Id, Vgs:35mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs:17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1105pF @ 25V
- Power - Max:43W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Supplier Device Package:PG-TDSON-8-4
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