SI5515CDC-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 20V 4A 1206-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI5515CDC-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 36,934
Can ship immediately
Pricing:
- 1$0.87
- 3,000$0.3731
- 6,000$0.34889
- 15,000$0.33678
- 30,000$0.33018
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:4A
- Rds On (Max) @ Id, Vgs:36mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:11.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:632pF @ 10V
- Power - Max:3.1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Supplier Device Package:1206-8 ChipFET™
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