SI5513CDC-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 20V 4A 1206-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI5513CDC-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 6,983
Can ship immediately
Pricing:
- 1$0.65
- 3,000$0.25142
- 6,000$0.23609
- 15,000$0.22077
- 30,000$0.21004
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:4A, 3.7A
- Rds On (Max) @ Id, Vgs:55mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:285pF @ 10V
- Power - Max:3.1W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Supplier Device Package:1206-8 ChipFET™
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