CAB400M12XM3

Technical Details

• Series:-
• Package:Box
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V
• Current - Continuous Drain (Id) @ 25°C:395A (Tc)
• Rds On (Max) @ Id, Vgs:5.3mOhm @ 400A, 15V

• Vgs(th) (Max) @ Id:3.6V @ 92mA
• Gate Charge (Qg) (Max) @ Vgs:908nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds:2450pF @ 800V
• Power - Max:-
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:-