APTM10DHM09T3G

Technical Details

• Series:POWER MOS V®
• Package:Bulk
• Part Status:Obsolete
• FET Type:2 N-Channel (Dual) Asymmetrical
• FET Feature:Standard
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:139A
• Rds On (Max) @ Id, Vgs:10mOhm @ 69.5A, 10V

• Vgs(th) (Max) @ Id:4V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs:350nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:9875pF @ 25V
• Power - Max:390W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:SP3
• Supplier Device Package:SP3