QJD1210011

Powerex, Inc.
In Stock: 145

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Rds On (Max) @ Id, Vgs:25mOhm @ 100A, 20V

 

  • Vgs(th) (Max) @ Id:5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
  • Power - Max:900W
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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