APTSM120TAM33CTPAG

Microsemi
In Stock: 111

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:6 N-Channel (3-Phase Bridge)
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:112A (Tc)
  • Rds On (Max) @ Id, Vgs:33mOhm @ 60A, 20V

 

  • Vgs(th) (Max) @ Id:3V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs:408nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:7680pF @ 1000V
  • Power - Max:714W
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6

Related Products


RJM0603JSC-00#13

MOSFET 3N/3P-CH 60V 20A HSOP

Call for price


RJM0603JSC-00#12

MOSFET 3N/3P-CH 60V 20A HSOP

RJM0603JSC-00#12 Datasheet

Call for price



AO4606L

MOSFET N-CH 8SOIC

AO4606L Datasheet

Call for price


AO4606L_DELTA

MOSFET N-CH 8SOIC

Call for price


SI4830CDY-T1-E3

MOSFET 2N-CH 30V 8A 8-SOIC

SI4830CDY-T1-E3 Datasheet

Call for price


SI5997DU-T1-GE3

MOSFET 2P-CH 30V 6A PPAK CHIPFET

SI5997DU-T1-GE3 Datasheet

Call for price


AO4813_002

MOSFET P-CH DUAL 8SOIC

AO4813_002 Datasheet

Call for price


AO5804EL

MOSFET N-CH SC89-3

Call for price


AO7600_001

MOSFET N/P-CH SC70-6

Call for price


Top