SCT3120ALGC11
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 650V 21A TO247N
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT3120ALGC11 Datasheet
-
ECAD Model
- Share
In Stock: 167
Can ship immediately
Pricing:
- 1$7.98
- 10$7.20838
- 30$6.87277
- 120$5.96741
- 270$5.69921
- 510$5.19635
- 1,020$4.69347
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id:5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs:38 nC @ 18 V
- Vgs (Max):+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):103W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247N
- Package / Case:TO-247-3
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