SCT2080KEC

ROHM Semiconductor
In Stock: 5,290

Can ship immediately

Pricing:
  • 1$24.82
  • 10$22.89249
  • 25$21.86404
  • 100$19.54883
  • 360$18.64856

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):18V
  • Rds On (Max) @ Id, Vgs:117mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id:4V @ 4.4mA

 

  • Gate Charge (Qg) (Max) @ Vgs:106 nC @ 18 V
  • Vgs (Max):+22V, -6V
  • Input Capacitance (Ciss) (Max) @ Vds:2080 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):262W (Tc)
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

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