SI1416EDH-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 3.9A SOT-363
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI1416EDH-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 34,373
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.14746
- 6,000$0.13899
- 15,000$0.13052
- 30,000$0.12035
- 75,000$0.11612
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
- Rds On (Max) @ Id, Vgs:58mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):2.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-363
- Package / Case:6-TSSOP, SC-88, SOT-363
Related Products
MOSFET N-CH 12V 1.6A 4DSBGA
- 1: $0.50000
- 3000: $0.14438
- 6000: $0.13563
