BSZ110N06NS3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 20A 8TSDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSZ110N06NS3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 21,696
Can ship immediately
Pricing:
- 1$0.88
- 5,000$0.33059
- 10,000$0.31835
- 25,000$0.31167
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):2.1W (Ta), 50W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-8
- Package / Case:8-PowerVDFN
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