IMW120R060M1HXKSA1

IR (Infineon Technologies)
In Stock: 739

Can ship immediately

Pricing:
  • 1$12.44

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Technical Details

  • Series:CoolSiC™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1.2 kV
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V, 18V
  • Rds On (Max) @ Id, Vgs:78mOhm @ 13A, 18V
  • Vgs(th) (Max) @ Id:5.7V @ 5.6mA

 

  • Gate Charge (Qg) (Max) @ Vgs:31 nC @ 18 V
  • Vgs (Max):+23V, -7V
  • Input Capacitance (Ciss) (Max) @ Vds:1.06 nF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):150W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO247-3-41
  • Package / Case:TO-247-3

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