SISH112DN-T1-GE3

Vishay / Siliconix
In Stock: 4,050

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 17.8A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2610 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® 1212-8SH
  • Package / Case:PowerPAK® 1212-8SH

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