NTJS4160NT1G

Rochester Electronics
In Stock: 637,327

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Pricing:
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:2.75 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Package / Case:6-TSSOP, SC-88, SOT-363

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