NVMFD6H852NLWFT1G

Technical Details

• Series:Automotive, AEC-Q101
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:7A (Ta), 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:25.5mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2V @ 26µA

• Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:521 pF @ 40 V
• FET Feature:-
• Power Dissipation (Max):3.2W (Ta), 38W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
• Package / Case:8-PowerTDFN