TK50P04M1(T6RSS-Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 50A DP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK50P04M1(T6RSS-Q) Datasheet
-
ECAD Model
- Share
In Stock: 1,807
Can ship immediately
Pricing:
- 1$1.02
- 2,000$0.3705
- 6,000$0.35772
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Technical Details
- Series:U-MOSVI-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:8.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DP
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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