IPA083N10N5XKSA1

Technical Details

• Series:OptiMOS™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:8.3mOhm @ 44A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 49µA

• Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2730 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):36W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-FP
• Package / Case:TO-220-3 Full Pack