FCHD190N65S3R0-F155

ON Semiconductor
In Stock: 24,312,232

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Pricing:
  • 1$3.21

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Technical Details

  • Series:SuperFET® III
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 390µA

 

  • Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):144W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

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