IPB097N08N3GATMA1

Rochester Electronics
In Stock: 131

Can ship immediately

Pricing:
  • 1$0.57334

Quote It

Technical Details

  • Series:*
  • Package:Bulk
  • Part Status:Active
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Related Products


BSZ0803LSATMA1

MOSFET N-CH 100V 9A/40A TSDSON

  • 1: $1.25000

RD3G03BATTL1

PCH -40V -35A POWER MOSFET - RD3

  • 1: $1.36000

RD3L03BATTL1

PCH -60V -35A POWER MOSFET - RD3

  • 1: $1.36000

RM110N85T2

MOSFET N-CH 85V 110A TO220-3

  • 1: $0.58000

RM150N60T2

MOSFET N-CH 60V 150A TO220-3

  • 1: $0.58000

RM7N600LD

MOSFET N-CHANNEL 600V 7A TO252-2

  • 1: $0.58000

IRL2203NPBF-INF

HEXFET POWER MOSFET

  • 1: $0.58000

SQJ211ELP-T1_GE3

MOSFET P-CH 100V 33.6A PPAK SO-8

  • 1: $1.38000

IPP60R600E6

N-CHANNEL POWER MOSFET

  • 1: $0.59000

RJK03M0DPA-WS#J5A

N-CHANNEL POWER MOSFET

  • 1: $0.59000

Top