SIDR220DP-T1-GE3

Vishay / Siliconix
In Stock: 174

Can ship immediately

Pricing:
  • 1$1.35675

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Technical Details

  • Series:TrenchFET® Gen IV
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:87.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
  • Vgs (Max):+16V, -12V
  • Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):6.25W (Ta), 125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8DC
  • Package / Case:PowerPAK® SO-8

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