IRF640,127

NXP Semiconductors
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Technical Details

  • Series:TrenchMOS™
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:180mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):136W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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