PDTD113EK,115
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 250MW SMT3
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet PDTD113EK,115 Datasheet
-
ECAD Model
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In Stock: 190
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):500 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):1 kOhms
- Resistor - Emitter Base (R2):1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:250 mW
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:SMT3; MPAK
