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Technical Details

  • Series:Z-FET™ Z-Rec™
  • Package:Bulk
  • Part Status:Not For New Designs
  • FET Type:6 N-Channel (3-Phase Bridge)
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:87A (Tc)
  • Rds On (Max) @ Id, Vgs:34mOhm @ 50A, 20V

 

  • Vgs(th) (Max) @ Id:2.3V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:180nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:2.810nF @ 800V
  • Power - Max:337W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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