APTSM120AM14CD3AG

Microsemi
In Stock: 102

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:2 N-Channel (Dual), Schottky
  • FET Feature:Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:337A (Tc)
  • Rds On (Max) @ Id, Vgs:11mOhm @ 180A, 20V

 

  • Vgs(th) (Max) @ Id:3V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs:1224nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 1000V
  • Power - Max:2140W
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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