CSD17553Q5A

Texas Instruments
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Technical Details

  • Series:NexFET™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:23.5A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:1.9V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3252 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSONP (5x6)
  • Package / Case:8-PowerTDFN

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